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Items where Author is "Sedghi, N"

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Article

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J and Chalker, PR (2017) Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping. Applied Physics Letters, 111 (9). ISSN 0003-6951

Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, W, Zhang, JF, Robertson, J, Hall, S and Chalker, PR (2017) The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110 (10). ISSN 0003-6951

Partida-Manzanera, T, Roberts, JW, Bhat, TN, Zhang, Z, Tan, HR, Dolmanan, SB, Sedghi, N, Tripathy, S and Potter, RJ (2016) Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors. Journal of Applied Physics, 119 (2). ISSN 0021-8979

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