Facial reconstruction

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Partida-Manzanera, T, Roberts, JW, Bhat, TN, Zhang, Z, Tan, HR, Dolmanan, SB, Sedghi, N, Tripathy, S and Potter, RJ (2016) Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors. Journal of Applied Physics, 119 (2). ISSN 0021-8979

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