Article

Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR, Tripathy, S and Potter, RJ (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). ISSN 0021-8979

Partida-Manzanera, T, Roberts, JW, Bhat, TN, Zhang, Z, Tan, HR, Dolmanan, SB, Sedghi, N, Tripathy, S and Potter, RJ (2016) Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors. Journal of Applied Physics, 119 (2). ISSN 0021-8979