A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF (2019) A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5). pp. 674-677. ISSN 0741-3106

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Abstract

A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p- FETs.

Item Type:	Article
Uncontrolled Keywords:	0906 Electrical and Electronic Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics and Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date of acceptance:	5 March 2019
Date of first compliant Open Access:	5 March 2019
Date Deposited:	05 Mar 2019 12:12
Last Modified:	03 Sep 2021 21:08
DOI or ID number:	10.1109/LED.2019.2903516
URI:	https://researchonline.ljmu.ac.uk/id/eprint/10245

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