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Duan, M, Zhang, JF, Ji, Z and Zhang, WD (2020) TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: 2020 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China).
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Abstract
Early works on device ageing often focus on one source, while devices in a circuit suffer degradation from different sources. There are only limited information on the impact of ageing from one source on ageing from a different source. This work researches into the interaction of ageing induced by Hot Carriers with that by Positive Bias Temperature Instability (PBTI). It will be shown that one can slow down the other and the ageing can be substantially overestimated without considering their interaction. Although a PBTI after Hot Carrier Ageing (HCA) will increase the degradation, a HCA following a PBTI can result in a reduction in ageing for long channel devices. The defect responsible for their interaction will be explored.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 11 Jun 2020 09:24 |
| Last Modified: | 22 May 2024 11:42 |
| DOI or ID number: | 10.1109/CSTIC49141.2020.9282605 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/13085 |
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