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Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing

Xue, F, He, X, Wang, Z, Retamal, JRD, Chai, Z, Lingling, J, Chenhui, Z, Fang, H, Chai, Y, Zhang, WD, Alshareef, H, Ji, Z, Li, L-J, He, J-H and Zhang, X Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Advanced Materials. ISSN 0935-9648 (Accepted)

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Abstract

Ferroelectrics have been demonstrated as excellent building blocks for high-performance non-volatile memories, including memristors, which play critical roles in the hardware implementation of artificial synapses and in-memory computing. Here, we report that the emerging van der Waals ferroelectric α-In2Se3 can be used to successfully implement heterosynaptic plasticity (a fundamental but rarely emulated synaptic form) using a planar-six-terminal memristor architecture. Through pulse programming at a modulatory terminal, the resistance (or current) switching between two floating electrodes shows a ratio of >103, which is two orders of magnitude larger than that in other reported multiterminal memristors. The polarization change of the ferroelectric α-In2Se3 channel is responsible for the resistance switching at various paired terminals. Considering the device variation, the image recognition accuracy of the simulated neural network, AlexNet, can reach 98%. Moreover, these heterosynaptic devices can naturally realize non-volatile Boolean logic without an additional circuit component. Our results suggest that van der Waals ferroelectrics hold great potential for applications in complex brain-inspired computing systems and logic-in-memory computers.

Item Type: Article
Uncontrolled Keywords: 02 Physical Sciences, 03 Chemical Sciences, 09 Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: Wiley
Date Deposited: 01 Mar 2021 11:31
Last Modified: 04 Sep 2021 05:51
URI: https://researchonline.ljmu.ac.uk/id/eprint/14537

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