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Liu, C, Guo, L, Qiao, Z, Li, J, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Wang, R and Huang, R (2022) Realization of NOR logic using Cu/ZnO/Pt CBRAM. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM . pp. 132-134. (2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March - 9th March 2022, Oita, Japan).
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EDTM-Realization_of_NOR_logic_using_Cu_ZnO_Pt_CBRAM (002).pdf - Accepted Version Download (576kB) | Preview |
Abstract
A method is proposed to realize NOR logic. Unlike existing solutions, the new solution has no requirements on unrealistic device characteristics such as high asymmetry to operating voltages or the small variations. By comprehensive analysis and the fabrication of Cu-based conductive-bridge- RAM, we show the reliably implementation, which paves ways for future low-power reconfigurable computing.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Computer Science & Mathematics |
| Publisher: | IEEE |
| SWORD Depositor: | A Symplectic |
| Date Deposited: | 28 Sep 2022 11:18 |
| Last Modified: | 28 Sep 2022 11:18 |
| DOI or ID number: | 10.1109/EDTM53872.2022.9798160 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/17327 |
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