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Qiao, Z, Li, J, Liu, C, Guo, L, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Liu, J, Wang, R and Huang, R (2022) Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 . pp. 333-335. (6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March 2022 - 9th March 2022, Oita, Japan).
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EDTM - Realization_of_Logical_NOT_Based_on_Standard_DRAM_Cells_for_security-centric_Compute-in-Memory_applications.pdf - Accepted Version Download (497kB) | Preview |
Abstract
In this study, a novel method, Bi-mode Activation, is proposed to implement logical NOT. For the first time, this is achieved without the need in modifying Dynamic Random Access Memory (DRAM) cells and core peripheral circuits, making it possible to be adopted in existing commercial DRAMs. The proposed method is successfully validated through simulation. Combined with the recently-proposed OR operation, the XOR-based data encryption is demonstrated, which paves ways for future security-centric in-memory-computing.
| Item Type: | Conference or Workshop Item (Paper) |
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| Subjects: | Q Science > QA Mathematics > QA76 Computer software T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Computer Science & Mathematics Engineering |
| Publisher: | IEEE |
| SWORD Depositor: | A Symplectic |
| Date Deposited: | 28 Sep 2022 11:21 |
| Last Modified: | 28 Sep 2022 11:21 |
| DOI or ID number: | 10.1109/EDTM53872.2022.9798182 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/17328 |
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