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An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Ji, Z, Zhang, JF, Zhang, WD, Gao, R and Zhang, X (2015) An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel. IEEE Transactions on Electron Devices, 62 (11). pp. 3633-3639. ISSN 0018-9383

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Continuing CMOS performance scaling requires developing MOSFETs of high-mobility semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs, however, suffer from high densities of border traps, and their origin and impact on device characteristics are poorly understood at present. In this paper, the border traps in nMOSFETs with an In0.53Ga0.47As channel and Al2O3 gate oxide are investigated using the discharging-based energy profiling technique. By analyzing the trap energy distributions after charging under different gate biases, two types of border traps together with their energy distributions are identified. Their different dependences on temperature and charging time support that they have different physical origins. The impact of channel thickness on them is also discussed. Identifying and understanding these different types of border traps can assist in the future process optimization. Moreover, border trap study can yield crucial information for long-term reliability modeling and device timeto-failure projection.

Item Type: Article
Additional Information: (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: IEEE
Date Deposited: 09 Oct 2015 11:03
Last Modified: 02 Mar 2022 12:45
DOI or ID number: 10.1109/TED.2015.2475604
URI: https://researchonline.ljmu.ac.uk/id/eprint/2145
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