Ji, Z (2015) Origins and implications of increased channel hot carrier variability in nFinFETs. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3B.5.1-3B.5.6. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23rd April 2015, Monterey, CA).

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Abstract

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited:	09 Oct 2015 11:10
Last Modified:	13 Apr 2022 15:14
URI:	https://researchonline.ljmu.ac.uk/id/eprint/2146

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