Hu, Z, Wang, G, Chai, Z, Zhang, W, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA). (Accepted)

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Abstract

Ovonic threshold switching (OTS) devices have recently demonstrated strong performance as selectors in highdensity cross-point 1S1R emerging memory arrays to suppress the sneak current path and as selector-only-memory (SOM), with excellent Ion, Ion/Ioff nonlinearity, and endurance. However, a detailed variability study is still lacking, and understanding of the responsible mechanisms is limited. In this work, different cycleto-cycle (C2C) Vth variability mechanisms in GeAsTe OTS are identified: (i) Defects that remain active at the off-state lead to
the less than 0.2 V intrinsic small random variability (SRV); (ii) Defects activated at the on-state result in up to 1 V large pseudorandom variability (LPV). Novel techniques such as the fast frequency-domain noise analysis and the sequential variability analysis are developed to identify the SRV and LPV mechanisms and to characterize their statistical correlations with different defects. The observed single modal, bimodal and multimodal C2C Vth variability distributions can be explained by the combination of SRV and LPV at different pulse operation conditions. This work provides critical guidance for OTS variability optimization.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Engineering
SWORD Depositor:	A Symplectic
Date Deposited:	01 Nov 2024 11:11
Last Modified:	01 Nov 2024 11:11
URI:	https://researchonline.ljmu.ac.uk/id/eprint/24639

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