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Hu, Z, Chai, Z, Zhang, W and Zhang, JF Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device. In: 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings . (2024 IEEE 17th International Conference on Solid-State & Integrated Circuit, 22nd Oct - 25th Oct 2024, Zhuhai, China). (Accepted)
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Abstract
Understanding the switching process in ovonic threshold switching (OTS) devices is an important research topic. Less attention has been paid to the fast switching-off process in the past, especially in modern nanoscale OTS devices. In this work, the OTS switching-off process in 1S1Rs operations are investigate. The underlying mechanisms can be explained by the dynamic resistance of OTS induced by the transition of defect clusters, and the impact of series resistance value on the switching off process is revealed. The defect cluster shrinking stage and rupture stage can be measured and characterized, respectively, which correspond to two distinct switch-off mechanisms. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Engineering |
| SWORD Depositor: | A Symplectic |
| Date Deposited: | 01 Nov 2024 16:26 |
| Last Modified: | 01 Nov 2024 16:26 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/24646 |
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