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Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions

Jian, J, Yuan, X, Chai, Z, Zhou, X, Luo, Y, He, Y, Yue, X, Zhang, JF, Zhang, W and Min, T (2024) Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions. IEEE Electron Device Letters. ISSN 0741-3106

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Abstract

The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.

Item Type: Article
Additional Information: © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering; Applied Physics
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
SWORD Depositor: A Symplectic
Date Deposited: 19 Dec 2024 11:40
Last Modified: 19 Dec 2024 12:04
DOI or ID number: 10.1109/led.2024.3515147
URI: https://researchonline.ljmu.ac.uk/id/eprint/25124
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