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Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).
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CSTIC 2016_Symposium 8-2_Jian-Fu-Zhang.pdf - Accepted Version Download (504kB) | Preview |
Abstract
Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them. By following the As-grown-Generation (AG) model proposed by our group, we present clear evidences that the As-grown hole traps (AHTs) are responsible for the RTN of pMOSFETs. AHTs also dominate NBTI initially, but the generated defects (GDs) become increasingly important for NBTI as stress time increases. The GDs, however, do not cause RTN.
| Item Type: | Conference or Workshop Item (Paper) |
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| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 29 Mar 2016 08:15 |
| Last Modified: | 13 Apr 2022 15:14 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/3327 |
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