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Ma, J, Chai, Z, Zhang, WD, Govoneanu, B, Zhang, JF, Ji, Z, Benbakhti, B, Groeseneken, G and Jurczak, M (2017) Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement. In: Technical Digest - International Electron Devices Meeting (2017). (IEEE International Electron Devices Meeting, 05 December 2016 - 07 December 2016, San Fransisco, USA).
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IEDM2016-aVMCO RRAM final submitted.pdf - Accepted Version Download (1MB) | Preview |
Abstract
Non-filamentary RRAM is a promising technology that features self-rectifying, forming/compliance-free, tight resistance distributions at both high and low resistance states (HRS/LRS). Direct experimental evidence for its physical switching & failure mechanisms, however, is still missing, due to the lack of suitable characterization techniques. In this work, a novel method combining the random-telegraph-noise (RTN), constant-voltagestress (CVS) and time-to-failure Weibull plot is developed to investigate these mechanisms in the non-filamentary RRAM cell based on amorphous-Si/TiO2. For the first time, the following key advances have been achieved: i) Switching mechanism by defect profile modulation in a critical interfacial region has been identified from defect locations extracted by RTN; ii) Defect profile in this region plays a critical role in device failure, leading to different Weibull distributions during negative (LRS) and positive (HRS) CVS; iii) Progressive formation of a conductive percolation path during electrical stress is directly observed due to defect generation in addition to pre-existing defect movement; iv) Optimizing the critical interfacial region significantly improves memory window and failure margin. This provides a useful tool for advancing the non-filamentary RRAM technology.
| Item Type: | Conference or Workshop Item (Paper) |
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| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Date Deposited: | 03 Oct 2016 08:39 |
| Last Modified: | 13 Apr 2022 15:14 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/4230 |
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