Zhang, JF, Duan, M, Ji, Z and Zhang, W (2016) Hot carrier aging of nano-meter devices. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25th - 28th October 2016, Hangzhou, China).

Preview

Text ICSICT-2016-Invited-JFZ-S27-2.pdf - Published Version Download (1MB) | Preview

Abstract

As the device size downscales, hot carrier aging (HCA) scales up and remerges as a major challenge to the reliability of modern CMOS technologies. The conventional method for predicting the HCA device lifetime is based on a power law kinetics and critically depends on the accuracy of the time power exponent, n. In this work, we study how to extract the n accurately. It will be shown that the widely used forward saturation current degradation gives erroneous n, because of the channel pinch-off. To reduce the test time, it will be demonstrated that the voltage step stress technique is applicable to HCA. The accuracy of the extracted HCA model will be verified against independently measured test data.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	03 Nov 2016 10:45
Last Modified:	08 Jul 2024 13:23
DOI or ID number:	10.1109/ICSICT.2016.7998943
URI:	https://researchonline.ljmu.ac.uk/id/eprint/4724

View Item