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Zhang, JF, Ma, J, Zhang, WD and Ji, Z (2017) DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: 2017 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China).
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Abstract
Germanium has higher hole mobility and is a candidate for replacing silicon for pMOSFETs. This work reviews the recent progresses in understanding the negative bias temperature instability (NBTI) of Ge pMOSFETs and compares it with SiON/Si devices. Both Ge and SiON/Si devices have two groups of defects: as-grown hole traps (AHT) and generated defects (GDs). The generation process, however, is different: GDs are interface-controlled for SiON/Si and dielectric-controlled for Ge devices. This leads to substantially higher GDs under DC stress than under AC stress for Ge, although they are similar for SiON/Si devices. Moreover, GDs alter their energy levels with charge status and can be reset to original precursor states after neutralization for Ge, but these processes are insignificant for SiON/Si. The impact of these differences on lifetime prediction will be presented and the defects and physical mechanism will be explored.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 04 Apr 2017 09:00 |
| Last Modified: | 09 Jul 2024 09:35 |
| DOI or ID number: | 10.1109/CSTIC.2017.7919733 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/6205 |
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