Zhang, JF, Ma, J, Zhang, WD and Ji, Z DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES. In: China Semiconductor Technology International Conference (CSTIC), 11 March 2017 - 13 March 2017, Shanghai, China. (Accepted)

Text CSTIC 2017_Symposium 1-20_Jian-Fu-Zhang.pdf - Accepted Version Download (515kB)

Abstract

Germanium has higher hole mobility and is a candidate for replacing silicon for pMOSFETs. This work reviews the recent progresses in understanding the negative bias temperature instability (NBTI) of Ge pMOSFETs and compares it with SiON/Si devices. Both Ge and SiON/Si devices have two groups of defects: as-grown hole traps (AHT) and generated defects (GDs). The generation process, however, is different: GDs are interface-controlled for SiON/Si and dielectric-controlled for Ge devices. This leads to substantially higher GDs under DC stress than under AC stress for Ge, although they are similar for SiON/Si devices. Moreover, GDs alter their energy levels with charge status and can be reset to original precursor states after neutralization for Ge, but these processes are insignificant for SiON/Si. The impact of these differences on lifetime prediction will be presented and the defects and physical mechanism will be explored.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	04 Apr 2017 09:00
Last Modified:	13 Apr 2022 15:15
URI:	https://researchonline.ljmu.ac.uk/id/eprint/6205

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