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Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2017) Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: 2017 IEEE 12th International Conference on ASIC (ASICON) . (IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.).
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Abstract
Hot carrier aging (HCA) has attracted a lot of attentions recently, as it can be a lifetime limiting mechanism for both I/O and core devices. The applicability of the conventional characterization method developed for large devices to nano-scale devices is questionable, as nano-scale devices suffers from within-a-device-fluctuation (WDF). This work shows that the inclusion of WDF measured by the commercial quasi-DC SMU gives erroneous results. A method is proposed to separate the WDF from the real HCA for reliable parameter extraction of the HCA model. The lifetime and use voltage become yield dependent and the impact of statistical variations on SRAM is assessed.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 05 Dec 2017 10:09 |
| Last Modified: | 08 Jul 2024 13:33 |
| DOI or ID number: | 10.1109/ASICON.2017.8252564 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/7532 |
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