Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

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Abstract

As device sizes scale down, device variations scale up. There are two types of device-to-device variations (DDV): as-fabricated or time-zero DDV and the time dependent variations (TDV). Even if two nano-scaled devices were identical at time-zero, they would be different after stresses and result in TDV, since the defect generation and charging-discharging are stochastic. To characterize TDV, statistical properties, such as the mean value and standard deviation, are extracted from tests. Their accuracy improves as the number of device under tests (DUTs) increases. Ageing is time consuming and the typical DUTs used are in the range of tens to hundreds. There is little information on the accuracy of the statistical properties extracted from such a limited DUTs and the objective of this paper is to propose a methodology to assess it. Based on the defect-centric model, the accuracy with a specific confidence level is evaluated for a given number of DUTs and a stress level.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	23 Mar 2018 09:28
Last Modified:	13 Apr 2022 15:16
URI:	https://researchonline.ljmu.ac.uk/id/eprint/8360

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