Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) A framework for defects in PBTI and hot carrier ageing. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China).

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Abstract

Both positive bias temperature instability (PBTI) and hot carrier ageing (HCA) are major challenges to the reliability of modern CMOS technologies. This work reviews the recent progresses in understanding the defects. An as-grown-generation (AG) framework is proposed, based on the energy profile, charging kinetics and generation. Three types of electron traps are identified: As-grown cyclic electron traps (ACET), generated cyclic electron traps (GCET), and generated anti-neutralization electron traps (ANET). PBTI only has ACET and ANET, while HCA also causes GCET and create new interface states. This lays the foundation for modelling PBTI and HCA.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	12 Nov 2018 10:20
Last Modified:	08 Jul 2024 14:22
DOI or ID number:	10.1109/ICSICT.2018.8565825
URI:	https://researchonline.ljmu.ac.uk/id/eprint/9637

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