Tools
Tools
Zhang, WD, Chai, Z, Ma, J and Zhang, JF (2018) Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China).
|
Text
ICSICT-2018-WZhang.pdf - Accepted Version Download (594kB) | Preview |
Abstract
The switching, degradation and failure mechanisms in amorphous-Si/TiO 2 based non-filamentary (a-VMCO) RRAM device has been analyzed through a combination of random-telegraph-noise (RTN) and constant- voltage-stress (CVS). The pre-existing and generated defects and their impacts have been identified. The amplitude of RTN, which leads to read instability, is evaluated statistically at different stages of cell degradation and correlated with different defects. It is found that the switching between low and high resistance states (LRS and HRS) are correlated with the profile modulation of pre-existing defects in the `defect-less' region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
| Divisions: | Electronics & Electrical Engineering (merged with Engineering 10 Aug 20) |
| Publisher: | IEEE |
| Date Deposited: | 13 Nov 2018 09:57 |
| Last Modified: | 09 Jul 2024 09:41 |
| DOI or ID number: | 10.1109/ICSICT.2018.8565748 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/9643 |
 |
View Item |