Zhang, WD, Chai, Z, Ma, J and Zhang, JF Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices. In: ICSICT 2018, 31 October 2018 - 03 November 2018, Qingdao, China. (Accepted)

Text ICSICT-2018-WZhang.pdf - Accepted Version Restricted to Repository staff only Download (594kB)

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	© 2018 IEEE
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	13 Nov 2018 09:57
Last Modified:	13 Apr 2022 15:16
URI:	https://researchonline.ljmu.ac.uk/id/eprint/9643

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