Items where Author is "Belmonte, A"

Article

Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A et al (2018) Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials. ISSN 2199-160X

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Saxena, N ORCID: 0000-0002-2626-1327, Wang, C, Hu, Z, Wang, G, Naqi, M, Zhang, L, Zhang, W, Zheng, C, Garbin, D, Degraeve, R, Clima, S, Ravsher, T and Belmonte, A Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches. IEEE Transactions on Electron Devices. ISSN 0018-9383 (Accepted)

Conference or Workshop Item

Hu, Z, Wang, G, Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G (2024) Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).