Article

Chen, Y, Chen, X, Hu, Z and Duan, N (2023) Comprehensive influence of ultrasonic vibration–assisted technology on material removal mechanism under the excitation of regenerative vibration in precision grinding process. International Journal of Advanced Manufacturing Technology. ISSN 0268-3768

Chen, Y, Jiang, C, Chen, X, Huang, G and Hu, Z (2023) Study on the dynamic influence of the distribution of cutting depth on the ground surface quality in a precision grinding process. Journal of Manufacturing Processes, 107. pp. 134-143. ISSN 1526-6125

Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Chen, X, Hu, Z, Wang, C and Liu, J (2015) A novel forming method for three-dimensional thin sheet metal. Proceedings of the Institution of Mechanical Engineers Part B: Journal of Engineering Manufacture. pp. 1-5. ISSN 0954-4054

Conference or Workshop Item

Hu, Z, Chai, Z, Zhang, W and Zhang, JF Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device. In: 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings . (2024 IEEE 17th International Conference on Solid-State & Integrated Circuit, 22nd Oct - 25th Oct 2024, Zhuhai, China). (Accepted)

Hu, Z, Wang, G, Chai, Z, Zhang, W, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA). (Accepted)