Items where Author is "Ren, P"

Article

Hu, Y, Wu, M, Yuan, M, Wen, Y, Ren, P, Ye, S, Liu, F, Zhou, B ORCID: 0000-0002-7824-3673, Fang, H, Wang, R, Ji, Z and Huang, R (2024) Accurate prediction of dielectric properties and bandgaps in materials with a machine learning approach. Applied Physics Letters, 125. ISSN 0003-6951

Ji, Z, Xue, Y, Ren, P, Ye, J, Li, Y, Wu, Y, Wang, D, Wang, S, Wu, J, Wang, Z, Wen, Y, Xia, S, Zhang, L, Zhang, J ORCID: 0000-0003-4987-6428, Liu, J, Luo, J, Deng, H, Wang, R, Yang, L and Huang, R (2023) Towards Reliability- & Variability-aware Design-Technology Co-optimization in Advanced Nodes: Defect Characterization, Industry-friendly Modelling and ML-assisted Prediction. IEEE Transactions on Electron Devices, 71 (1). pp. 138-150. ISSN 0018-9383

Xue, Y, Ren, P, Wu, J, Liu, Z, Wang, S, Li, Y, Wang, Z, Sun, Z, Wang, D, Wen, Y, Xia, S, Zhang, L, Zhang, J ORCID: 0000-0003-4987-6428, Ji, Z, Luo, J, Deng, H, Wang, R, Yang, L and Huang, R (2023) On the understanding of PMOS NBTI degradation in advance nodes: Characterization, modeling and exploration on the physical origin of defects. IEEE Transactions on Electron Devices, 70 (9). pp. 4518-4524. ISSN 0018-9383

Liu, X, Ren, P, Chen, H ORCID: 0000-0001-7046-3455, Ji, Z ORCID: 0000-0003-1138-804X, Liu, J ORCID: 0000-0002-2492-8124, Wang, R ORCID: 0000-0002-7514-0767, Zhang, JF ORCID: 0000-0003-4987-6428 and Huang, R (2022) Equiprobability-based Local Response Surface Method for High-Sigma Yield Estimation with Both High Accuracy and Efficiency. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 42 (4). pp. 1346-1350. ISSN 0278-0070

Liu, C, Ren, P, Zhou, B, Zhang, JF, Fang, H and Ji, Z (2021) Investigation on the implementation of stateful minority logic for future in-memory computing. IEEE Access, 9. pp. 168648-168655. ISSN 2169-3536

Tu, Z, Xue, Y, Ren, P, Hao, F, Wang, R, Li, M, Zhang, JF, Ji, Z and Huang, R (2021) A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity. IEEE Electron Device Letters. ISSN 0741-3106

Conference or Workshop Item

Wu, J, Ren, P, Zhang, C, Xiao, Y, Xue, Y, Li, Y, Wang, X, Zhang, L, Liu, J, Zhang, J ORCID: 0000-0003-4987-6428, Wang, R, Ji, Z and Huang, R (2024) Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling. In: 2023 International Electron Devices Meeting (IEDM) . pp. 1-4. (69th Annual IEEE International Electron Devices Meeting (IEDM), 9th - 13th December 2023, San Francisco, USA).

Qiao, Z, Li, J, Liu, C, Guo, L, Ren, P, Ye, S, Zhou, B ORCID: 0000-0002-7824-3673, Zhang, J ORCID: 0000-0003-4987-6428, Ji, Z, Liu, J, Wang, R and Huang, R (2022) Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 . pp. 333-335. (6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March 2022 - 9th March 2022, Oita, Japan).

Liu, C, Guo, L, Qiao, Z, Li, J, Ren, P, Ye, S, Zhou, B ORCID: 0000-0002-7824-3673, Zhang, J ORCID: 0000-0003-4987-6428, Ji, Z, Wang, R and Huang, R (2022) Realization of NOR logic using Cu/ZnO/Pt CBRAM. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM . pp. 132-134. (2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March - 9th March 2022, Oita, Japan).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).