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NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction

Ma, J and Zhang, WD and Zhang, JF and Benbakhti, B and Ji, Z and Mitard, J and Franco, J and Kaczer, B and Groeseneken, G (2014) NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.2.1-34.2.4. (2014 IEEE International Electron Devices Meeting (IEDM), 15th-17th December 2014, San Francisco, CA).

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Abstract

Ge pMOSFETs are strong candidates for next technology nodes and record hole mobility has been reported for Al2O3/GeO2/Ge and HfO2/SiO2/Si-cap/Ge structures. Reliability, however, is still problematic and currently impedes the progress. Large NBTI exists in GeO2/Ge, and little is known about the defects. Si-cap/Ge device has superior reliability, but its lifetime, τ, cannot be predicted by power law extrapolation. This work demonstrates that the defects are different in Ge and Si devices. For the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, which enables τ prediction and process optimization.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 06 Jul 2015 11:47
Last Modified: 08 Sep 2015 13:40
URI: http://researchonline.ljmu.ac.uk/id/eprint/1512

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