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Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

Gao, R and Manut, AB and Ji, Z and Ma, J and Duan, M and Zhang, JF and Franco, J and Hatta, SFWM and Zhang, WD and Kaczer, B and Vigar, D and Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

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Abstract

To predict the negative bias temperature instability (NBTI) towards the end of pMOSFETs’ 10 years lifetime, power-law based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents, n. The n reported by early work spreads in a wide range and varies with measurement conditions, which can lead to unacceptable errors when extrapolated to 10 years. The objective of this work is to find how to make the n extraction independent of measurement conditions. After removing the contribution from as-grown hole traps (AHT), a new method is proposed to capture the generated defects (GD) in their entirety. The n extracted by this method is around 0.2 and insensitive to measurement conditions for the four fabrication processes we tested. The model based on this method is verified by comparing its prediction with measurements. Under AC operation, the model predicts that GD can contribute to ~90% of NBTI at 10 years.

Item Type: Article
Additional Information: (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: 08 Information And Computing Sciences, 09 Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: General Engineering Research Institute
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 17 Jul 2017 08:44
Last Modified: 17 Jul 2017 08:44
URI: http://researchonline.ljmu.ac.uk/id/eprint/6810

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