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Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals

Chai, Z and Ma, J and Zhang, WD and Govoreanu, B and Zhang, JF and Ji, Z and Jurczak, M (2017) Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals. IEEE Transactions on Electron Devices. ISSN 0018-9383

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Abstract

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified during normal device operations remain speculative, because direct experimental evidence at defect level has been missing. In this paper, a random-telegraph-signal-based defect-tracking technique (RDT) is developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the CF of state-of-the-art hafnium-oxide RRAM devices. For the first time, the critical filament region of the CF is experimentally identified, which is located near, but not at, the bottom electrode with a length of nanometer scale. We demonstrate with the RDT technique that the modification of this key constriction region by defect movements can be observed and correlated with switching operation conditions, providing insight into the resistive switching mechanism.

Item Type: Article
Additional Information: (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 05 Sep 2017 11:30
Last Modified: 07 Sep 2017 04:08
DOI or Identification number: 10.1109/TED.2017.2742578
URI: http://researchonline.ljmu.ac.uk/id/eprint/7044

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