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TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices. ISSN 0018-9383 (Accepted)

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Abstract

Mechanisms of time-dependent-dielectric-breakdown (TDDB) in non-filamentary a-Si/TiO2 RRAM cell (a-VMCO) have been examined in this work, including defects generation in the grain boundary, defects clustering and different defects generation rates in a-Si and TiO2 layers. The unique feature of a bimodal Weibull distribution at low resistance state (LRS) and a single shallow slope distribution at high resistance state (HRS) cannot be explained by the above mechanisms. By using a combination of constant-voltage-stress (CVS), time-to-breakdown Weibull distribution and random-telegraph-noise (RTN) based defect profiling in devices of various sizes, layer thickness and processes, it is revealed that the defect profile is modulated when switching between HRS and LRS and the correlation of defect profile modulation with local defect generation rate can explain the difference in Weibull distributions at HRS and LRS. The transition from bimodal distribution at LRS to a single-steep- slope with thinner a-Si layer, and the good area scaling of Weibull distribution at HRS but not at LRS, can also be explained. The critical layers affecting the TDDB in a-VMCO are identified, providing useful guidance for device performance improvement.

Item Type: Article
Additional Information: © 2018 IEEE
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 12 Nov 2018 11:15
Last Modified: 12 Nov 2018 11:19
URI: http://researchonline.ljmu.ac.uk/id/eprint/9640

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