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A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition

Zhan, X, Shen, C, Ji, Z, Chen, J, Fang, H, Guo, F and Zhang, JF (2019) A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition. IEEE Electron Device Letters, 40 (5). pp. 674-677. ISSN 0741-3106

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Open Access URL: http://dx.doi.org/10.1109/LED.2019.2903516 (Published version)

Abstract

A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p- FETs.

Item Type: Article
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics and Electrical Engineering
Publisher: IEEE
Date Deposited: 05 Mar 2019 12:12
Last Modified: 03 May 2019 09:41
DOI or Identification number: 10.1109/LED.2019.2903516
URI: http://researchonline.ljmu.ac.uk/id/eprint/10245

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