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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Partida-Manzanera, T, Zaidi, ZH, Roberts, JW, Dolmanan, SB, Lee, KB, Houston, PA, Chalker, PR, Tripathy, S and Potter, RJ (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). ISSN 0021-8979

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Abstract

The current research investigates the potential advantages of replacing Al2O3 with (Ta2O5)0.12(Al2O3)0.88 as a higher dielectric constant (κ) gate dielectric for GaN-based metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The electrical characteristics of GaN-capped AlGaN/GaN MOS-HEMT devices with (Ta2O5)0.12(Al2O3)0.88 as the gate dielectric are compared to devices with Al2O3 gate dielectric and devices without any gate dielectric (Schottky HEMTs). Compared to the Al2O3 MOS-HEMT, the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT achieves a larger capacitance and a smaller absolute threshold voltage, together with a higher two-dimensional electron gas carrier concentration. This results in a superior improvement of the output characteristics with respect to the Schottky HEMT, with higher maximum and saturation drain current values observed from DC current-voltage measurements. Gate transfer measurements also show a higher transconductance for the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT. Furthermore, from OFF-state measurements, the (Ta2O5)0.12(Al2O3)0.88 MOS-HEMT shows a larger reduction of the gate leakage current in comparison to the Al2O3 MOS-HEMT. These results demonstrate that the increase in κ of (Ta2O5)0.12(Al2O3)0.88 compared with Al2O3 leads to enhanced device performance when the ternary phase is used as a gate dielectric in the GaN-based MOS-HEMT.

Item Type: Article
Additional Information: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 126, 034102 (2019) and may be found at https://doi.org/10.1063/1.5049220
Uncontrolled Keywords: 01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Engineering & Technology Research Institute
Publisher: AIP Publishing
Date Deposited: 25 Jul 2019 09:20
Last Modified: 25 Jul 2019 09:20
DOI or Identification number: 10.1063/1.5049220
URI: http://researchonline.ljmu.ac.uk/id/eprint/11115

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