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A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs

Duffy, S, Benbakhti, B, Zhang, WD, Ahmeda, K, Kalna, K, Boucherta, M, Mattalah, M, Chahdi, HO, Bourzgui, N-E and Soltani, A (2020) A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 67 (5). pp. 1924-1930. ISSN 0018-9383

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A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN=GaN HEMTs under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge trapping time constant is found to be independent of both drain (VDS) and gate (VGS) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.

Item Type: Article
Additional Information: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 16 Mar 2020 13:12
Last Modified: 16 Aug 2022 10:15
DOI or ID number: 10.1109/TED.2020.2980329
URI: https://researchonline.ljmu.ac.uk/id/eprint/12504
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