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Duan, M, Zhang, JF, Ji, Z and Zhang, WD TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: Proc. IEEE China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China). (Accepted)

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Early works on device ageing often focus on one source, while devices in a circuit suffer degradation from different sources. There are only limited information on the impact of ageing from one source on ageing from a different source. This work researches into the interaction of ageing induced by Hot Carriers with that by Positive Bias Temperature Instability (PBTI). It will be shown that one can slow down the other and the ageing can be substantially overestimated without considering their interaction. Although a PBTI after Hot Carrier Ageing (HCA) will increase the degradation, a HCA following a PBTI can result in a reduction in ageing for long channel devices. The defect responsible for their interaction will be explored.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited: 11 Jun 2020 09:24
Last Modified: 13 Apr 2022 15:18
URI: https://researchonline.ljmu.ac.uk/id/eprint/13085

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