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Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD (2020) Defect loss and its physical processes. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming).
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Abstract
Defects in MOSFETs generally have adverse effects on device performance: they increase the threshold voltage, reduce the driving current, and in turn, lower the operation speed. Early works focus on the charging and discharging of defects and their impact on device lifetime. There is little information on the stability of defects themselves, i.e., whether a defect can be lost. The objective of this work is to demonstrate that defects indeed can be lost and to investigate which type of defects are lost and the physical processes for the defect loss. It is found that the losses originate from the generated interface states and anti-neutralization positive charges. The loss is a thermally activated process and it is speculated that the depletion of hydrogen species from the device could lead to the loss.
| Item Type: | Conference or Workshop Item (Paper) |
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| Additional Information: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Civil Engineering & Built Environment Engineering |
| Publisher: | IEEE |
| Date Deposited: | 28 Sep 2020 12:40 |
| Last Modified: | 08 Jul 2024 14:42 |
| DOI or ID number: | 10.1109/ICSICT49897.2020.9278393 |
| URI: | https://researchonline.ljmu.ac.uk/id/eprint/13738 |
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