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Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

Zhang, JF, Duan, M, Manut, A, Ji, Z, Zhang, W, Asenov, A, Gerrer, L, Reid, D, Razaidi, H, Vigar, D, Chandra, V, Aitken, R, Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

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As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: IEEE
Date Deposited: 08 Oct 2015 14:47
Last Modified: 13 Apr 2022 15:14
URI: https://researchonline.ljmu.ac.uk/id/eprint/2138
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