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Perspective: Zinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devices

Silva, C, Deuermeier, J, Zhang, W, Carlos, E, Barquinha, P, Martins, R and Kiazadeh, A (2023) Perspective: Zinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devices. Advanced Electronic Materials. ISSN 2199-160X

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As the Internet of things (IOT) industry continues to grow with an ever-increasing number of connected devices, the need for processing large amounts of data in a fast and energy-efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in-memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco-friendly zinc-tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low-cost, and critical-raw-material-free composition. In this perspective article, the research progress on ZTO-based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.

Item Type: Article
Uncontrolled Keywords: 0906 Electrical and Electronic Engineering; 0912 Materials Engineering
Subjects: T Technology > T Technology (General)
T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Engineering
Publisher: Wiley
SWORD Depositor: A Symplectic
Date Deposited: 27 Sep 2023 08:39
Last Modified: 27 Sep 2023 08:54
DOI or ID number: 10.1002/aelm.202300286
URI: https://researchonline.ljmu.ac.uk/id/eprint/21592
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