Hong, Y, Zheng, X, He, Y, Zhang, H, Zhang, W, Zhang, J, Ma, X and Hao, Y (2024) Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes. Materials Science in Semiconductor Processing, 185. ISSN 1369-8001

Text 1-s2.0-S1369800124008837.pdf - Accepted Version Restricted to Repository staff only until 7 October 2025. Available under License Creative Commons Attribution Non-commercial No Derivatives. Download (2MB)

Abstract

Vertical p-n hetero-junction diodes (HJDs) were fabricated by employing NiOx/β-Ga2O3 with p-NiOx junction termination extension (JTE). It is found that NiOx JTE leads to reduce interface states density in devices based on a smaller voltage hysteresis interval in I-V hysteresis analysis and a decrease in parasitic capacitance in C-V characteristics. It is due to the fact that JTE help to the retrain the activation of interface states. This study provides a basic understanding of interface states and lays the groundwork for the development of guiding principles for the design of Ga2O3 HJDs.

Item Type:	Article
Uncontrolled Keywords:	Heterojunction diode; Interface states; Junction termination extension; 0912 Materials Engineering; Applied Physics
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Engineering
Publisher:	Elsevier
SWORD Depositor:	A Symplectic
Date Deposited:	18 Dec 2024 16:14
Last Modified:	18 Dec 2024 16:15
DOI or ID number:	10.1016/j.mssp.2024.108987
URI:	https://researchonline.ljmu.ac.uk/id/eprint/25123

View Item