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Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

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Silicon bandgap limits the reduction of operation voltage when downscaling device sizes. This increases the electrical field within a device and hot carrier aging (HCA) is becoming an important reliability issue again for some CMOS technologies. For nano-devices, there are a number of challenges for characterizing their HCA: the random charge-discharge of traps in gate dielectric causes ‘within-a-device-fluctuation (WDF)’, making the parameter shift uncertain after a given HCA. This can introduce errors when extracting HCA time exponents and it will be shown that the lower envelope of the WDF must be used. Nano-devices also have substantial device-to-device variation (DDV) and multiple tests are needed for evaluating their standard deviation, σ, and mean value, µ. Repeating the time-consuming HCA tests is costly and a voltage-step-stress method is applied to reduce the number of tests by 80%. For a given number of devices under tests (DUTs), there is little information on the accuracy of the extracted σ and µ. We will develop a method to provide this information, based on the defect-centric model. For 40 DUTs with an average of 10 traps per device, the extracted µ and σ has an accuracy of ±14% and ±24% respectively with a 95% confidence.

Item Type: Article
Additional Information: (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords: 0906 Electrical And Electronic Engineering
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher: Institute of Electrical and Electronics Engineers
Date Deposited: 04 Apr 2017 08:52
Last Modified: 04 Sep 2021 11:44
DOI or ID number: 10.1109/TED.2017.2691008
URI: https://researchonline.ljmu.ac.uk/id/eprint/6204
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