Ji, Z, Gao, R, Zhang, JF, Marsland, J and Zhang, WD (2018) As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI). IEEE Transactions on Electron Devices, 65 (9). pp. 3662-3668. ISSN 0018-9383

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Abstract

Positive Bias Temperature Instability (PBTI) is poised to cause significant degradation to nFETs with deep scaling into nanometers. It is commonly modelled by a power law fitted with measured threshold voltage shift. For the first time, this work shows that such models do not warrant PBTI prediction outside the stress conditions used for the fitting. The underlying cause for this failure is the errors in the extracted power exponent. Based on the understanding of different types of defects, we develop a robust As-grown-Generation (A-G) model and demonstrate its capability for accurate prediction of PBTI under both DC and AC conditions. The generation-induced degradation is found to play a key role. Analysis reveals that, although PBTI is usually smaller than NBTI within the typical test time window, it can exceed NBTI by the end of device lifetime.

Item Type:	Article
Additional Information:	© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords:	0906 Electrical And Electronic Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	Institute of Electrical and Electronics Engineers
Date Deposited:	19 Jul 2018 09:57
Last Modified:	04 Sep 2021 10:20
URI:	https://researchonline.ljmu.ac.uk/id/eprint/8979

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