Items where Author is "Belmonte, A"

Article

Saxena, N ORCID: 0000-0002-2626-1327, Wang, C, Hu, Z, Wang, G, Naqi, M, Zhang, L, Zhang, W, Zheng, C, Garbin, D, Degraeve, R, Clima, S, Ravsher, T and Belmonte, A (2026) Impact of Chalcogen Chemistry on Transient Switching Dynamics in GeAsSe and GeAsTe Ovonic Threshold Switches. IEEE Transactions on Electron Devices. ISSN 0018-9383

Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A et al (2018) Recommended Methods to Study Resistive Switching Devices. Advanced Electronic Materials. ISSN 2199-160X

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Conference or Workshop Item

Hu, Z, Wang, G, Chai, Z, Zhang, W ORCID: 0000-0003-4600-7382, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G (2024) Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA).