Article

Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Zhou, X, Hu, Z, Chai, Z, Zhang, WD, Clima, S, Degraeve, R, Zhang, JF, Fantini, A, Garbin, D, Delhougne, R, Goux, L and Kar, GS (2022) Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching. IEEE Electron Device Letters, 43 (7). pp. 1061-1064. ISSN 0741-3106

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Zhang, JF, Marsland, J, Fantini, A, Garbin, D, Clima, S, Goux, L and Kar, GS (2019) RTN in GexSe1-x OTS Selector Devices. Microelectronic Engineering, 215. ISSN 0167-9317

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Conference or Workshop Item

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G (2019) Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: 2019 IEEE International Electron Devices Meeting (IEDM) . (IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco).

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposium on VLSI Technology . (2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan).

Hu, Z, Wang, G, Chai, Z, Zhang, W, Garbin, D, Degraeve, R, Clima, S, Ravsher, T, Fantini, A, Zhang, JF, Belmonte, A and Kar, G Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices. In: 2024 International Electron Devices Meeting (IEDM) . (International Electron Device Meeting, 7th Dec - 11th Dec 2024, San Francisco, California, USA). (Accepted)