Article

Zhang, JF, Gao, R, Duan, M, Ji, Z, Zhang, WD and Marsland, J (2022) Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11 (19).

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B and Asenov, A (2017) Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs. IEEE Transactions on Electron Devices, 64 (6). pp. 2478-2484. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Vigar, D, Asenov, A, Gerrer, L, Chandra, V, Aitken, R and Kaczer, B (2016) Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging. IEEE Transactions on Electron Devices, 63 (9). pp. 3642-3648. ISSN 0018-9383

Manut, AB, Zhang, JF, Duan, M, Ji, Z, Zhang, WD, kaczer, B, Schram, T, Horiguchi,, N and Groeseneken, G (2015) Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Duan, M, Zhang, JF, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Groeseneken, G and Asenov, A (2014) Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (9). pp. 3081-3089. ISSN 0018-9383

Conference or Workshop Item

Zhang, JF, Duan, M, Mehedi, M, Tok, D, Ye, Z, Ji, Z and Zhang, WD (2020) Defect loss and its physical processes. In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) . (IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming).

Duan, M, Zhang, JF, Ji, Z and Zhang, WD (2020) TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI. In: 2020 China Semiconductor Technology International Conference (CSTIC) . (China Semiconductor Technology International Conference (CSTIC)., 26-27th June 2020, Shanghai, China).

Zhang, JF, Ji, Z, Duan, M, Zhang, WD and Zhao, C (2019) Voltage step stress: a technique for reducing test time of device ageing. In: 2019 International Conference on IC Design and Technology (ICICDT) . (THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY, 17 - 19 June 2019, Suzhou, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) A framework for defects in PBTI and hot carrier ageing. In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), 31st October - 3rd November 2018, Qingdao, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2018) Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations. In: Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018) . (2018 China Semiconductor Technology International Conference (CSTIC), 11-12th March 2018, Shanghai, China).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2017) Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage. In: 2017 IEEE 12th International Conference on ASIC (ASICON) . (IEEE 12th International Conference on ASIC, 24 October 2017 - 28 October 2017, Guiyang, China.).

Duan, M, Zhang, JF, Zhang, JC, Zhang, WD, Ji, Z, Benbakhti, B, Zhang, XF, Hao, Y, Vigar, D, Chandra, V, Aitken, R, Kaczer, B, Groeseneken, G and Asenov, A (2017) Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction. In: IEEE International Reliability Physics Symposium Proceedings . (2017 IEEE International Reliability Physics Symposium, 02 April 2017 - 06 April 2017, California, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, W (2016) Hot carrier aging of nano-meter devices. In: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) . (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 25th - 28th October 2016, Hangzhou, China).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2016) DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY. In: IEEE Explore . (2016 IEEE China Semiconductor Technology International Conference, 13 March 2016 - 14 March 2016, Shanghai, China).

Zhang, JF, Duan, M, Manut, A, Ji, Z, Zhang, W, Asenov, A, Gerrer, L, Reid, D, Razaidi, H, Vigar, D, Chandra, V, Aitken, R, Kaczer, B and Groeseneken, G (2015) Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM) . 20.4.1-20.4.4. (IEEE International Electron Devices Meeting (IEDM), 7th - 9th December 2015, Washington, DC, USA).

Zhang, JF, Duan, M, Ji, Z and Zhang, WD (2015) NBTI prediction and its induced time dependent variation. In: Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON) . pp. 1-4. (2015 11th IEEE International Conference on ASIC (ASICON), 03 November 2015 - 06 November 2015, Chengdu, China).

Ji, Z, Zhang, JF, Lin, L, Duan, M, Zhang, WD, Zhang, X, Gao, R, Kaczer, B, Franco, J, Schram, T, Horiguchi, N, De Gendt, S and Groeseneken, G (2015) A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias. In: 2015 Symposium on VLSI Technology Digest of Technical Papers . T36-T37. (2015 Symposia on VLSI Technology and Circuits, 16 June 2015 - 18 June 2015, Kyoto, Japan).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).

Zhang, JF, Duan, M, Ji, Z, Zhang, WD, Kaczer, B, Schram, T, Ritzenthaler, R, Thean, G, Groseneken, G and Asenov, A (2014) Time-dependent variation: A new defect-based prediction methodology. In: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers . (IEEE Symposium of VLSI technology, 9th - 12th June 2014, Honolulu).