Items where Author is "Hong, Y"

Hong, Y, Zheng, X, He, Y, Zhang, H, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J, Ma, X and Hao, Y (2024) Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes. Materials Science in Semiconductor Processing, 185. ISSN 1369-8001

Hong, Y, Zheng, X, Zhang, H, He, Y, Zhu, T, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, JF, Ma, X and Hao, Y (2024) Fröhlich Scattering Effects on Electron Mobility in β-Ga2O3 Power Devices under High Temperature. Physica Status Solidi (B) Basic Research. ISSN 0370-1972

Zhang, H, Zheng, X, Lin, D, Hong, Y, Zhou, J, Lv, L, Cao, Y, Han, H, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J, Ma, X and Hao, Y (2024) Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias. IEEE Transactions on Electron Devices. pp. 1-5. ISSN 0018-9383

Zhang, H ORCID: 0000-0003-1689-8532, Zheng, X ORCID: 0000-0002-9410-3849, Lin, D, Lv, L, Cao, Y, Hong, Y ORCID: 0000-0002-2067-2168, Zhang, F ORCID: 0000-0002-1092-4368, Wang, X ORCID: 0000-0002-0943-1427, Wang, Y ORCID: 0000-0003-0606-5588, Zhang, W ORCID: 0000-0003-4600-7382, Zhang, J ORCID: 0000-0003-4987-6428, Ma, X and Hao, Y ORCID: 0000-0001-7876-8878 (2024) Study on the single-event burnout mechanism of GaN MMIC power amplifiers. Applied Physics Letters, 124 (8). ISSN 0003-6951