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Items where Author is "Kar, G"

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Number of items: 5.

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Marsland, J, Govoreanu, B, Degraeve, R, Goux, L and Kar, G (2018) TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device. IEEE Transactions on Electron Devices, 66 (1). pp. 777-784. ISSN 0018-9383

Ma, J, Chai, Z, Zhang, WD, Zhang, JF, Ji, Z, Benbakhti, B, Govoreanu, B, Simoen, E, Goux, L, Belmonte, A, Degraeve, R, Kar, G and Jurczak, M (2018) Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution. IEEE Transactions on Electron Devices, 65 (3). pp. 970-977. ISSN 0018-9383

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco. (Accepted)

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

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