Article

Brown, J, Tok, KH, Gao, R, Ji, Z, Zhang, W, Marsland, JS, Chiarella, T, Franco, J, Kaczer, B, Linten, D and Zhang, JF (2023) A Pragmatic Model to Predict Future Device Aging. IEEE Access, 11. pp. 127725-127736. ISSN 2169-3536

Ji, Z, Gao, R, Manut, AB, Zhang, JF, Franco, J, Hatta, SWM, Zhang, W, Kaczer, B, Linten, D and Groeseneken, G (2017) NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling. IEEE Transactions on Electron Devices, 64 (10). pp. 4011-4017. ISSN 0018-9383

Gao, R, Manut, AB, Ji, Z, Ma, J, Duan, M, Zhang, JF, Franco, J, Hatta, SFWM, Zhang, WD, Kaczer, B, Vigar, D, Linten, D and Groeseneken, G (2017) Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation. IEEE Transactions on Industrial Electronics, 64 (4). pp. 1467-1473. ISSN 0278-0046

Conference or Workshop Item

Ji, Z, Linten, D, Boschke, R, Hellings, G, Chen, SH, Alian, A, Zhou, D, Mols, Y, Ivanov, T, Franco, J, Kaczer, B, Zhang, X, Gao, R, Zhang, JF, Zhang, WD and Collaert, N (2015) ESD characterization of planar InGaAs devices. In: Reliability Physics Symposium (IRPS), 2015 IEEE International . 3F.1.1-3F.1.7. (IEEE International Reliability Physics Symposium (IRPS), 19th April - 23th April 2015, Monterey, CA).