Article

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Ji, Z, Xue, Y, Ren, P, Ye, J, Li, Y, Wu, Y, Wang, D, Wang, S, Wu, J, Wang, Z, Wen, Y, Xia, S, Zhang, L, Zhang, J, Liu, J, Luo, J, Deng, H, Wang, R, Yang, L and Huang, R (2023) Towards Reliability- & Variability-aware Design-Technology Co-optimization in Advanced Nodes: Defect Characterization, Industry-friendly Modelling and ML-assisted Prediction. IEEE Transactions on Electron Devices, 71 (1). pp. 138-150. ISSN 0018-9383

Xue, Y, Ren, P, Wu, J, Liu, Z, Wang, S, Li, Y, Wang, Z, Sun, Z, Wang, D, Wen, Y, Xia, S, Zhang, L, Zhang, J, Ji, Z, Luo, J, Deng, H, Wang, R, Yang, L and Huang, R (2023) On the understanding of PMOS NBTI degradation in advance nodes: Characterization, modeling and exploration on the physical origin of defects. IEEE Transactions on Electron Devices, 70 (9). pp. 4518-4524. ISSN 0018-9383

Liu, X, Ren, P, Chen, H, Ji, Z, Liu, J, Wang, R, Zhang, JF and Huang, R (2022) Equiprobability-based Local Response Surface Method for High-Sigma Yield Estimation with Both High Accuracy and Efficiency. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 42 (4). pp. 1346-1350. ISSN 0278-0070

Liu, C, Ren, P, Zhou, B, Zhang, JF, Fang, H and Ji, Z (2021) Investigation on the implementation of stateful minority logic for future in-memory computing. IEEE Access, 9. pp. 168648-168655. ISSN 2169-3536

Tu, Z, Xue, Y, Ren, P, Hao, F, Wang, R, Li, M, Zhang, JF, Ji, Z and Huang, R (2021) A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity. IEEE Electron Device Letters. ISSN 0741-3106

Conference or Workshop Item

Wu, J, Ren, P, Zhang, C, Xiao, Y, Xue, Y, Li, Y, Wang, X, Zhang, L, Liu, J, Zhang, J, Wang, R, Ji, Z and Huang, R (2024) Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling. In: 2023 International Electron Devices Meeting (IEDM) . pp. 1-4. (69th Annual IEEE International Electron Devices Meeting (IEDM), 9th - 13th December 2023, San Francisco, USA).

Qiao, Z, Li, J, Liu, C, Guo, L, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Liu, J, Wang, R and Huang, R (2022) Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 . pp. 333-335. (6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March 2022 - 9th March 2022, Oita, Japan).

Liu, C, Guo, L, Qiao, Z, Li, J, Ren, P, Ye, S, Zhou, B, Zhang, J, Ji, Z, Wang, R and Huang, R (2022) Realization of NOR logic using Cu/ZnO/Pt CBRAM. In: 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM . pp. 132-134. (2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 6th March - 9th March 2022, Oita, Japan).

Ji, Z, Gao, R, Zhang, JF, Zhang, WD, Duan, M, Ren, P, Arimura, H, Wang, R and Franco, R (2016) Understanding charge traps for optimizing Si-passivated Ge nMOSFETs. In: 2016 IEEE Symposium on VLSI Technology . (Symposia on VLSI Technology and Circuits, 13th-17th June 2016, Hawaii, US).

Ji, Z, Ren, P, Duan, M and Zhang, JF (2015) New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era. In: Electron Devices Meeting (IEDM), 2014 IEEE International . 34.1.1-34.1.4. (Electron Devices Meeting, 15th - 17th December 2014, San Francisco, CA).