Manut, AB, Zhang, JF, Ji, Z and Zhang, WD (2019) Interaction between random telegraph noise and hot carrier ageing. In: 2019 China Semiconductor Technology International Conference (CSTIC) . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China).

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Abstract

As downscaling reaches nanometer scale, Hot Carrier Ageing (HCA) and Random Telegraphy Noise (RTN) are two important sources of device instability. Early works typically investigate them separately and treat them as independent phenomena. In reality, however, they occur simultaneously in a device and their interaction is not fully understood. In this work, we study the impact of HCA on RTN amplitude. It is found that for devices of average RTN, HCA only has a limited effect on RTN. For devices of abnormally high RTN, however, HCA can substantially reduce the RTN. The underlying physical mechanism is explored.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date Deposited:	25 Jan 2019 11:03
Last Modified:	12 Jun 2024 12:15
DOI or ID number:	10.1109/CSTIC.2019.8755673
URI:	https://researchonline.ljmu.ac.uk/id/eprint/10020

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