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Manut, AB, Zhang, JF, Ji, Z and Zhang, WD INTERACTION BETWEEN RANDOM TELEGRAPH NOISE AND HOT CARRIER AGEING. In: IEEE Explore . (IEEE China Semiconductor Technology International Conference (CSTIC), 18-19 March 2019, Shanghai, China). (Accepted)

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As downscaling reaches nanometer scale, Hot Carrier Ageing (HCA) and Random Telegraphy Noise (RTN) are two important sources of device instability. Early works typically investigate them separately and treat them as independent phenomena. In reality, however, they occur simultaneously in a device and their interaction is not fully understood. In this work, we study the impact of HCA on RTN amplitude. It is found that for devices of average RTN, HCA only has a limited effect on RTN. For devices of abnormally high RTN, however, HCA can substantially reduce the RTN. The underlying physical mechanism is explored.

Item Type: Conference or Workshop Item (Paper)
Additional Information: © 2019 IEEE
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions: Electronics & Electrical Engineering (merged with Engineering 10 Aug 20)
Date Deposited: 25 Jan 2019 11:03
Last Modified: 13 Apr 2022 15:16
URI: https://researchonline.ljmu.ac.uk/id/eprint/10020
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