GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

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Abstract

In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ∼50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.

Item Type:	Article
Uncontrolled Keywords:	0906 Electrical and Electronic Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Electronics and Electrical Engineering (merged with Engineering 10 Aug 20)
Publisher:	IEEE
Date of acceptance:	17 December 2019
Date of first compliant Open Access:	8 January 2020
Date Deposited:	08 Jan 2020 09:46
Last Modified:	04 Sep 2021 08:13
DOI or ID number:	10.1109/LED.2019.2960947
URI:	https://researchonline.ljmu.ac.uk/id/eprint/11965

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