Article

Hu, Z, Zhang, W, Degraeve, R, Garbin, D, Chai, Z, Saxena, N, Freitas, P, Fantini, A, Ravsher, T, Clima, S, Zhang, J, Delhougne, R, Goux, L and Kar, G (2022) New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors. IEEE Transactions on Electron Devices. ISSN 0018-9383

Pereira, M, Deuermeier, J, Zhang, WD, Freitas, P, Barquinha, P, Martins, R, Fortunato, E and Kiazadeh, A (2022) Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks. APL Materials, 10. ISSN 2166-532X

Chai, Z, Zhang, WD, Clima, S, Hatem, F, Degraeve, R, Diao, Q, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2021) Cycling induced metastable degradation in GeSe Ovonic threshold switching selector. IEEE Electron Device Letters, 42 (10). pp. 1148-1451. ISSN 0741-3106

Brown, J, Zhang, JF, Zhou, B, Mehedi, M, Freitas, P, Marsland, J and Ji, Z (2020) Random‑telegraph‑noise‑enabled true random number generator for hardware security. Scientific Reports, 10. ISSN 2045-2322

Joksas, D, Freitas, P, Chai, Z, Ng, WH, Buckwell, M, Li, C, Zhang, WD, Xia, QF, Kenyon, AJ and Mehonic, A (2020) Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks. Nature Communications, 11 (4273). ISSN 2041-1723

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Degraeve, R, Clima, S, Zhang, J, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2020) Stochastic computing based on volatile GeSe ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Wei, S, Zhang, WD, Brown, J, Degraeve, R, Salim, F, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G (2019) GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, GS (2019) Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Freitas, P, Zhang, WD, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L and Kar, GS (2018) Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network. IEEE Electron Device Letters. ISSN 0741-3106

Chai, Z, Zhang, WD, Freitas, P, Hatem, F, Zhang, JF, Marsland, J, Govoreanu, B, Goux, L, Kar, GS, Hall, S, Chalker, P and Robertson, J (2018) The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique. IEEE Electron Device Letters, 39 (7). pp. 955-958. ISSN 0741-3106

Conference or Workshop Item

Chai, Z, Freitas, P, Zhang, WD, Zhang, JF and Marsland, J (2021) True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors. In: IEEE Explore . (2021 IEEE 14th International Conference on ASIC, 26 October 2021 - 29 October 2021, Kunming, China).

Hatem, F, Chai, Z, Zhang, WD, Fantini, A, Degraeve, R, Clima, S, Garbin, D, Robertson, J, Guo, Y, Zhang, JF, Marsland, J, Freitas, P, Goux, L and Kar, G Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme. In: IEEE International Electron Device Meeting (IEDM), 09 December 2019 - 11 December 2019, San Francisco. (Accepted)

Chai, Z, Zhang, W, Degraeve, R, Clima, S, Hatem, F, Zhang, JF, Freitas, P, Marsland, J, Fantini, A, Garbin, D, Goux, L and Kar, G Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors. In: 2019 Symposia on VLSI Technology and Circuits, 10 June 2019 - 14 June 2019, Kyoto, Japan. (Accepted)

Freitas, P, Zhang, WD, Chai, Z, Zhang, JF and Marsland, J Impact of RTN and Variability on RRAM-Based Neural Network. In: IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology, 03 November 2020 - 06 November 2020, Kunming, China. (Accepted)

Thesis

Freitas, P (2023) Simulation and programming strategies to mitigate device non-idealities in memristor based neuromorphic systems. Doctoral thesis, Liverpool John Moores University.